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| APM4546K Dual Enhancement Mode MOSFET (N-and P-Channel) Features * N-Channel 30V/7A, RDS(ON) =20m (typ.) @ VGS = 10V RDS(ON) =27m (typ.) @ VGS = 4.5V P-Channel -30V/-5A, RDS(ON) =38m (typ.) @ VGS =-10V RDS(ON) =46m (typ.) @ VGS =-4.5V Pin Description www..com * Top View of SOP - 8 (8) D1 (7) D1 (3) S2 * * * Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) (2) G1 (4) G2 Applications * Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S1 (1) D2 (5) D2 (6) N-Channel MOSFET P-Channel MOSFET Ordering and Marking Information APM4546 Lead Free Code Handling Code Temp. Range Package Code APM4546 K : APM4546 XXXXX Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 1 www.anpec.com.tw APM4546K Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* www..com (TA = 25C unless otherwise noted) N Channel 30 16 VGS=10V (N) VGS=-10V (P) 7 25 2 150 -55 to 150 TA=25C TA=100C 2 0.8 62.5 C/W P Channel -30 16 -5 -20 -2 Unit V A A C W Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation IS* TJ TSTG PD* RJA* Thermal Resistance-Junction to Ambient 2 Note: *Surface Mounted on 1in pad area, t 10sec. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Parameter Test Condition APM4546K Min. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 38 27 46 0.8 -0.8 1.5 -1.5 30 -30 1 30 -1 -30 2 -2 100 100 26 50 36 60 Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A VGS=0V, IDS=-250A VDS=24V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85C VDS=-24V, VGS=0V TJ=85C VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VDS=VGS, IDS=250A VDS=VGS, IDS=-250A VGS=16V, VDS=0V VGS=16V, VDS=0V VGS=10V, IDS=7A RDS(ON) a Drain-Source On-State Resistance VGS=-10V, IDS=-5A VGS=4.5V, IDS=5A VGS=-4.5V, IDS=-4A V A V nA m Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 2 www.anpec.com.tw APM4546K Electrical Characteristics (Cont.) Symbol Parameter (T A = 25C unless otherwise noted) APM4546K Min. Typ. Max. Test Condition Unit Diode Characteristics VSD www..com a Diode Forward Voltage ISD=2A, VGS=0V ISD=-2A, VGS=0V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.8 -0.8 2 10 790 900 130 140 80 75 7 7 9 12 27 42 6 19 10 1.3 -1.3 V Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz N-Channel VGS=0V, VDS=15V, Frequency=1.0MHz P-Channel VGS=0V, VDS=-15V, Frequency=1.0MHz N-Channel VDD=15V, RL=15, IDS=1A, VGEN =10V, RG=6 P-Channel VDD=-15V, RL=15, IDS=-1A, VGEN =-10V, RG=6 Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time pF Crss td(ON) Tr td(OFF) Tf 14 14 17 17 36 56 12 26 nC ns Q rr N-Channel I =7A, dISD/dt =100A/s Reverse Recovery Charge SD P-Channel ISD=-5A, dISD/dt =100A/s b 9 Gate Charge Characteristics Qg Q gs Q gd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge N-Channel VDS=15V, VGS=10V, IDS=7A P-Channel VDS=-15V, VGS=-10V, IDS=-5A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 18.1 18.2 1.7 2.3 2.2 1.6 24 24 nC a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing. Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 3 www.anpec.com.tw APM4546K Typical Characteristics N-Channel Power Dissipation 2.5 8 Drain Current 2.0 www..com 1.5 ID - Drain Current (A) 6 Ptot - Power (W) 4 1.0 2 0.5 o 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 0 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area Normalized Transient Thermal Resistance 100 Thermal Transient Impedance 2 1 Duty = 0.5 ID - Drain Current (A) Rd s(o n) 10 Lim it 1ms 10ms 0.2 0.1 0.1 0.05 0.02 0.01 1 100ms 1s DC 0.01 0.1 Single Pulse 0.01 0.01 TA=25 C 0.1 1 10 100 O 1E-3 1E-4 Mounted on 1in pad o RJA : 62.5 C/W 2 1E-3 0.01 0.1 1 10 30 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 4 www.anpec.com.tw APM4546K Typical Characteristics (Cont.) N-Channel Output Characteristics 25 VGS= 4, 5, 6, 7, 8, 9, 10V 3V 20 32 36 Drain-Source On Resistance RDS(ON) - On - Resistance (m) ID - Drain Current (A) www..com 28 VGS=4.5V 24 20 16 12 8 VGS=10V 15 10 2.5V 5 2V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 25 1.8 Gate Threshold Voltage IDS=250A 1.6 20 Normalized Threshold Voltage 1.4 1.2 1.0 0.8 0.6 0.4 ID - Drain Current (A) 15 Tj=125 C 10 Tj=25 C 5 o o Tj=-55 C o 0 0 1 2 3 4 5 0.2 -50 -25 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 5 www.anpec.com.tw APM4546K Typical Characteristics (Cont.) N-Channel Drain-Source On Resistance 2.0 1.8 VGS = 10V IDS = 7A 10 Tj=150 C o Source-Drain Diode Forward 30 Normalized On Resistance 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 RON@Tj=25 C: 20m 0 25 50 75 100 125 150 o IS - Source Current (A) www..com Tj=25 C 1 o 0.1 0.0 0.3 0.6 0.9 1.2 1.5 Tj - Junction Temperature (C) VSD - Source - Drain Voltage (V) Capacitance 1400 1200 Frequency=1MHz 10 VDS=15V IDS =7A Gate Charge VGS - Gate - source Voltage (V) 25 8 C - Capacitance (pF) 1000 800 600 400 200 0 Ciss 6 4 2 Crss Coss 0 5 10 15 20 0 0 4 8 12 16 20 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 6 www.anpec.com.tw APM4546K Typical Characteristics (Cont.) P-Channel Power Dissipation 2.5 6 Drain Current 2.0 www..com 5 -ID - Drain Current (A) o Ptot - Power (W) 4 1.5 3 1.0 2 0.5 1 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 0 TA=25 C,VG=-10V 0 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area Normalized Transient Thermal Resistance 100 Thermal Transient Impedance 2 1 Duty = 0.5 0.2 -ID - Drain Current (A) Rd s(o n) Lim it 10 1ms 10ms 0.1 0.05 0.02 0.01 0.1 1 100ms 1s DC 0.01 0.1 Single Pulse T =25 C 0.01 A 0.01 0.1 O 1 10 100 1E-3 1E-4 Mounted on 1in pad o RJA : 62.5 C/W 2 1E-3 0.01 0.1 1 10 30 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 7 www.anpec.com.tw APM4546K Typical Characteristics (Cont.) P-Channel Output Characteristics 20 18 16 VGS= -4,-5,-6,-7,-8,-9,-10V 80 70 60 VGS= -4.5V 50 40 30 20 10 VGS= -10V Drain-Source On Resistance -ID - Drain Current (A) www..com 14 12 10 8 6 4 2 0 0.0 0.5 1.0 1.5 -2V 2.0 2.5 3.0 -2.5V RDS(ON) - On - Resistance (m) -3V 0 4 8 12 16 20 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics 20 18 16 1.8 Gate Threshold Voltage IDS= -250 1.6 Normalized Threshold Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 -ID - Drain Current (A) 14 12 10 8 6 4 2 0 0 1 2 3 4 5 Tj=25 C o Tj=125 C o Tj=-55 C o 0 25 50 75 100 125 150 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 8 www.anpec.com.tw APM4546K Typical Characteristics (Cont.) P-Channel Drain-Source On Resistance 1.8 VGS = -10V 1.6 IDS = -5A Source-Drain Diode Forward 20 10 Tj=150 C o Normalized On Resistance 1.2 1.0 0.8 0.6 0.4 -50 -25 RON@Tj=25 C: 38m 0 25 50 75 100 125 150 o -IS - Source Current (A) www..com 1.4 1 Tj=25 C o 0.1 -0.5 0.0 0.5 1.0 1.5 2.0 Tj - Junction Temperature (C) -VSD - Source - Drain Voltage (V) Capacitance 1400 Frequency=1MHz 1200 1000 Ciss 800 600 400 200 Crss 0 0 10 VDS= -15V ID= -5A 8 Gate Charge -VGS - Gate - source Voltage (V) C - Capacitance (pF) 6 4 2 Coss 0 5 10 15 20 25 0 4 8 12 16 20 -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 9 www.anpec.com.tw APM4546K Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) www..com E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 1 Millimeters Min. 1.35 0.10 4.80 3.80 5.80 0.40 0.33 1.27BSC 8 Max. 1.75 0.25 5.00 4.00 6.20 1.27 0.51 Min. 0.053 0.004 0.189 0.150 0.228 0.016 0.013 0.015X45 Inches Max. 0.069 0.010 0.197 0.157 0.244 0.050 0.020 0.50BSC 8 Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 10 www.anpec.com.tw APM4546K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition www..com (IR/Convection or VPR Reflow) TP Ramp-up tp Critical Zone T L to T P Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 25 C to Peak Time Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds 6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. 11 www.anpec.com.tw Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 APM4546K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process - Package Peak Reflow Temperature s 3 3 Package Thickness Volume mm Volume mm <350 350 <2.5 mm 240 +0/-5C 225 +0/-5C 2.5 mm 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Temperatures 3 3 3 Volume mm Volume mm Volume mm www..com Package Thickness <350 350-2000 >2000 <1.6 mm 260 +0C* 260 +0C* 260 +0C* 1.6 mm - 2.5 mm 260 +0C* 250 +0C* 245 +0C* 2.5 mm 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 12 www.anpec.com.tw APM4546K Carrier Tape & Reel Dimensions(Cont.) T2 J C www..com A B T1 Application A 3301 F 5.5 0.1 B C J 62 1.5 12.75 + 0.1 2 + 0.5 5 T1 12.4 +0.2 T2 2 0.2 Ao 6.4 0.1 W 12 + 0.3 - 0.1 Bo 5.2 0.1 P 8 0.1 E 1.75 0.1 SOP-8 D D1 Po P1 1.550.1 1.55+ 0.25 4.0 0.1 2.0 0.1 Ko t 2.1 0.1 0.30.013 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 (mm) Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 13 www.anpec.com.tw |
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